Have good thermal, electrical, dielectric, corrosion resistant and high temperature properties, and it has also good thermal conductivity,
high hardness, infrared transparency and chemical stability and widely used as high-temperature infrared window materials,
it is also excellent substrate materials for III-V nitride and some epitaxial Superconducting thin films.
Crystal structure | hexagonal(a=4.758Å,c=12.992Å) |
Density | 3.98g/cm3 |
purity | Udoped(99.9999%),lightly doped and heavily doped |
Dielectric constant | ～9.4(300k) at A axis, ～11.58(300k) at C axis |
Orientation | C,R,A,M±0.5o |
Size | 10×10×0.5 mm, 0.5″×0.5″×0.5mm Φ1″×0.5 mm, Φ2″×0.5 mm,Φ3″×0.5 mm |
Polished | One side or double side polished |
Surface roughness | ≤5Å |
Package | 100 clean bags, single or multi-chip wafer box |
