ITO (Low density) Sputtering Target

ITO (Low density) Sputtering Target

CAS No 50926-11-9
Formula In2O3.x(SnO2)
Application
Material : In2O3+SnO2
Size : 10*3; 18*8; 24*14; 30*10mm or according to the customer's requirements
Density(g/cm3) : Relative density: 60±2%
Refractive Index : Resistivity ≤1.6X10-4 Ω·cm
Form : Green Tablets
Purity : 4N
Application : ITO conductive film, LCD, LED, etc

Production process of ITO target:

1. Hot isostatic pressing method
2. Hot pressing method
3. Sintering method
Grain size: 5 ~ 15 µ M
Resistivity: 1.2 × 10-4Ω·cm
Linear expansion coefficient: 5.8 × 10-6K-1


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