SiO2 Crystal Substrate

Preparation methods

Hydrothermal

Crystal structure

Hexagonal(a=4.914Å, c=5.405 Å)

Density

2.684g/cm3

Purity

>99.95%

Thermal expansivity

α11:13.71×10-6 / ℃,   α33:7.48×10-6 /℃

Transmittance

350nm-2300nm

Orientation

X ,Y or Z, rotate randomly between 30o~42.75 o ±5′

Size

50 x 50 x 30mm 1” x 1” x 0.5mm,10 x 10 x 0.5mm 5 x 5 x 0.5mm

Polished

One side or double side polished

Surface roughness

≤10Å

Package

100 clean bags, single or multi-chip wafer box